100V 120A 2.5mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM002N100AM uses advanced PowerCubeSemi’s MOSFET Technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as low power drives of E bike (E Vehicles), DC/DC converter, and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 100V at 120Amps @TJ = 25℃
- Max RDS(ON) = 2.8 mΩ.
- Typ RDS(ON) = 2.5 mΩ
- Gate Charge(Typ. Qg = 147 nC)
- 100% UIL Tested
- 100% Rg Tested
Application
- DC/DC Converter
- Electric Vehicle
- General purpose
[TO-220]
Datasheet
PM002N100AM
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