100V 300A 1.85mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM002N100TM uses advanced PowerCubeSemi’s MOSFET technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as high power drives of E vehicles(E bike), DC/DC converter and BMS, general purpose applications.
Features
Si Super junction MOSFET
- Rated to 100V at 300Amps @TJ = 25℃
- Max RDS(ON) = 2.3 mΩ.
- Typ RDS(ON) = 1.85 mΩ
- Gate Charge(Typ. Qg = 167 nC)
- Very low on-resistance RDS(ON)
- 100% Avalanche Tested
- 100% Rg Tested
Application
- Motor Inverter
- Battery Management
- Power Inverter
[TOLL-8Lead]
Datasheet
PM002N100TM
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