100V 190A 3.5mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM003N100DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-CH Enhancement Mode Power MOSFET
- Rated to 100V at 190Amps @TJ = 25℃
- Max RDS(ON) = 3.5 mΩ.
- Typ RDS(ON) = 2.9 mΩ
- Gate Charge(Typ. Qg = 68 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-263(D2PAK)]
Datasheet
PM003N100DG
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