-40V -68A 7.5mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM007P040HG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si P-CH Enhancement Mode Power MOSFET
- Rated to -40V at -68Amps @TJ = 25℃
- Max RDS(ON) = 7.5 mΩ.
- Typ RDS(ON) = 6 mΩ
- Gate Charge(Typ. Qg = 42 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-220F]
Datasheet
PM007P040HG
Language