-60V -195A 7.5mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM007P060DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si P-CH Enhancement Mode Power MOSFET
- Rated to -60V at -195Amps @TJ = 25℃
- Max RDS(ON) = 7.5 mΩ.
- Typ RDS(ON) = 6.2 mΩ
- Gate Charge(Typ. Qg = 186 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[D2PAK(TO-263)]
Datasheet
PM007P060DG
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