85V 65A 8.5mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM008N085GG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-ch Enhancement Mode Power MOSFET
- Rated to 85V at 65mps @TJ = 25℃
- Max RDS(ON) = 8.5 mΩ.
- Typ RDS(ON) = 7 mΩ
- Gate Charge(Typ. Qg = 39 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[DFN5X6-8L]
Datasheet
PM008N085GG
Language