100V 40A 7.0mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM008N100AM uses advanced PowerCubeSemi’s MOSFET technology, which provides high performance in on state resistance, fast switching performance and excellent quality. PM008N100AM is suitable device for DC/DC Converter and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 100V at 97Amps @TJ = 25℃
- Max RDS(ON) = 8.4 mΩ.
- Typ RDS(ON) = 7.0 mΩ
- Gate Charge(Typ. Qg = 54.5 nC)
- 100% UIL Tested
- 100% Rg Tested
Application
- DC/DC Converter
- General purpose applications
[TO-220]
Datasheet
PM008N100AM
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