100V 65A 8mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM008N100CG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si N-CH Enhancement Mode Power MOSFET
- Rated to 100V at 65Amps @TJ = 25℃
- Max RDS(ON) = 8.0 mΩ.
- Typ RDS(ON) = 6.2 mΩ
- Gate Charge(Typ. Qg = 35 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[DPAK(TO-252)]
Datasheet
PM008N100CG
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