60V 35A 13mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM013N060HG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si N-CH Enhancement Mode Power MOSFET
- Rated to 60V at 35Amps @TJ = 25℃
- Max RDS(ON) = 13 mΩ.
- Typ RDS(ON) = 10 mΩ
- Gate Charge(Typ. Qg = 75 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-220F]
Datasheet
PM013N060HG
Language