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PSF70060B

600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode

Description

PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, the combination of Super Junction MOSFET with FRD is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features

Si Super junction MOSFET

  • Rated to 600V at 70Amps @TJ = 25℃
  • Max RDS(on) = 41 mΩ
  • Typ RDS(on) = 38 mΩ
  • Gate Charge(Typ.Qg = 160 nC)
  • Improved dv/dt Capability
  • 100% Avalanche Tested
Application
  • PFC Power Supply Stages
  • Switching Applications
  • Adapter
  • Motor Control
  • DC-DC Converters

[TO-247-3Lead]

Datasheet
PSF70060B