650V 15A Si Trench Gate Field-Stop IGBT
Description
PSI15065HM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- High Ruggedness for Motor Control
- VCE(sat) Positive Temperature Coefficient.
- Very Soft, Fast Recovery Anti-Parallel Diode
- Low EMI
- Maximum Junction Temperature 175 ℃
Application
- Inverter for Motor Control
[TO-220F]
Datasheet
PSI15065HM
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