1200V 40A Si Trench Gate Field-Stop IGBT
Description
PSI40120BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 1200V at 40Amps @TJ = 100℃
- High Speed Switching & Low Power Loss
- VCE(sat) = 2.0V @IC = 40A
- High Input Impedance
- Ultra Soft, Fast Recovery anti-parallel diode
- Ultra narrowed VF distribution control
- Positive Temperature coefficient for east paralleling
Application
- PFC
- UPS
- PV Inverter
[TO-247]
Datasheet
PSI40120BM
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