650V 60A Si Trench Gate Field-Stop IGBT
Description
PSI60065BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 650V at 60Amps @TJ = 100℃
- High Speed Switching & Low Power Loss
- VCE(sat) = 1.85V @IC = 60A
- Eoff =0.53mJ @ TC =25℃
- High Input Impedance
- Trr = 110nS(Typ.) @dIF/dt=500A/uS
- Maximum Junction Temperature 175 ℃
Application
- PFC
- Welder
- UPS
- PV Inverter
- IH Cooker
[TO-247]
Datasheet
PSI60065BM
Language