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PSM20065H

650V 20A 200mΩ Si Super junction MOSFET with Normal body diode

Description

PSM20065H is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features

Si Super junction MOSFET

  • Rated to 650V at 20Amps @TJ = 100℃
  • Max RDS(on) = 200 mΩ
  • Typ RDS(on) = 190 mΩ
  • Gate Charge(Typ.Qg = 35 nC)
  • Improved dv/dt Capability
  • 100% Avalanche Tested
Application
  • LCD/LED/PDP TV
  • Telecom/Server Power supplies
  • AC-DC Power Supply
  • LED Lighting

[TO-220F]

Datasheet
PSM20065H