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PSZ17080H

800V 17A 210mΩ Si Super junction MOSFET with Zener diode

Description

PSZ17080H is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge
balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is
tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, the combination of Super Junction MOSFET is suitable for PV inverters and LED Lighting.

Features

Si Super junction MOSFET

  • Rated to 800V at 17Amps @TJ = 25℃
  • Max RDS(on) = 210 mΩ
  • Typ RDS(on) = 185 mΩ
  • Improved dv/dt Capability
  • 100% Avalanche Tested
  • Excellent ESD robustness
Application
  • PV Inverters
  • LED Lighting

[TO-200F]

Datasheet
PSZ17080H