40V 325A 0.41mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT041N040LF is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 325Amps @TC = 25℃
- Max RDS(on) = 0.46 mΩ
- Typ RDS(on) = 0.41 mΩ
- Gate Charge(Typ.Qg = 169 nC)
- Surface-mounted package
- Low Termal Resistance
Application
- LCD TV Applications
- High Power Inverter System
- LCDM Applications
[LFPAK5060]
Datasheet
PGT041N040LF
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