40V 325A 0.5mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT050N040LFH is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 325Amps @TC = 25℃
- Max RDS(on) = 0.55 mΩ
- Typ RDS(on) = 0.5 mΩ
- Gate Charge(Typ.Qg = 121 nC)
- Surface-mounted package
- Low Termal Resistance
Application
- Motor Drivers
- DC-DC Converter
[LFPAK5060]
Datasheet
PGT050N040LFH
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