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PGT059N030G

30V 430A 0.59mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT059N030G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 30V at 430Amps @TC = 25℃
  • Max RDS(on) = 0.7 mΩ
  • Typ RDS(on) = 0.59 mΩ
  • Gate Charge(Typ.Qg = 100 nC)
  • Surface-mounted package
  • Low Thermal Resistance
  • Super Trench
  • MSL1
Application
  • Motor Drivers
  • DC-DC Converter

[PDFN5060]

Datasheet
PGT059N030G