40V 400A 0.84mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT084N040D7H is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 400Amps @TC = 25℃
- Max RDS(on) = 0.96 mΩ
- Typ RDS(on) = 0.84 mΩ
- Gate Charge(Typ.Qg = 125 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- MSL1
Application
- Light Electric Vehicles
- High Power Inverter System
- BMS Appilcations
- Drone Applications
[TO-263-7Lead]
Datasheet
PGT084N040D7H
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