60V 500A 0.6mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT060N060T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 60V at 500Amps @TC = 25℃
- Max RDS(on) = 0.68 mΩ
- Typ RDS(on) = 0.6 mΩ
- Gate Charge(Typ.Qg = 274 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Power Applications
- High Power Inverter System
- BMS Applications
- E-Tool Applications
[TOLL-8L]
Datasheet
PGT060N060T
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