80V 500A 0.7mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT070N080T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 80V at 500Amps @TC = 25℃
- Max RDS(on) = 0.85 mΩ
- Typ RDS(on) = 0.7 mΩ
- Gate Charge(Typ.Qg = 338 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Power Applications
- High Power Inverter System
- BMS Applications
- E-Tool Applications
[TOLL-8L]
Datasheet
PGT070N080T
Language