40V 297A 0.84mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT084N040G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 297Amps @TC = 25℃
- Max RDS(on) = 0.93 mΩ
- Typ RDS(on) = 0.84 mΩ
- Gate Charge(Typ.Qg = 80 nC)
- Advanced Trench Cell Design
- Low Thermal Resistance
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT084N040G
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