40V 194A 1.2mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT120N040G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 194Amps @TC = 25℃
- Max RDS(on) = 1.4 mΩ
- Typ RDS(on) = 1.2 mΩ
- Gate Charge(Typ.Qg = 181 nC)
- Surface-mounted package
- Low Thermal Resistance
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT120N040G
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