60V 326A 0.9mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT090N060LF is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 60V at 326Amps @TC = 25℃
- Max RDS(on) = 0.95 mΩ
- Typ RDS(on) = 0.9 mΩ
- Gate Charge(Typ.Qg = 145 nC)
- Surface-mounted package
- Advanced trench cell design
- Low Termal Resistance
Application
- Motor Drivers
- DC-DC Converter
[LFPAK5060]
Datasheet
PGT090N060LF
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