100V 500A 1.2mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT120N100T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 100V at 500Amps @TC = 25℃
- Max RDS(on) = 1.4 mΩ
- Typ RDS(on) = 1.2 mΩ
- Gate Charge(Typ.Qg = 167 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- MSL1
Application
- Drone Applications
- High Power Inverter System
- BMS Applications
- Light Electric Vehicles
[TOLL-8L]
Datasheet
PGT120N100T
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