-30V -150A 1.8mΩ Si P-Channel Enhancement Mode Split gate MOSFET
Description
PGT180P030G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to -30V at -150Amps @TC = 25℃
- Max RDS(on) = 2.0 mΩ
- Gate Charge(Typ.Qg = 212 nC)
- Advanced Trench Cell Design
- Low Thermal Resistance
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT180P030G
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