30V 75A 1.9mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT190N030LF is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 30V at 75Amps @TC = 25℃
- Max RDS(on) = 2.2 mΩ
- Typ RDS(on) = 1.9 mΩ
- Gate Charge(Typ.Qg = 52 nC)
- Surface-mounted package
- Low Termal Resistance
Application
- Motor Drivers
- DC-DC Converter
[LFPAK5060]
Datasheet
PGT190N030LF
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