100V 280A 2.3mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT230N100T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 100V at 280Amps @TC = 25℃
- Max RDS(on) = 2.3 mΩ
- Gate Charge(Typ.Qg = 131 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- MSL1
Application
- Drones Applications
- High Power Inverter System
- BMS Applications
- Light Electric Vehicles
[TOLL-8L]
Datasheet
PGT230N100T
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