80V 300A 2.4mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT240N080D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 80V at 300Amps @TC = 25℃
- Max RDS(on) = 2.8 mΩ
- Typ RDS(on) = 2.4 mΩ
- Gate Charge(Typ.Qg = 257 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- MSL1
Application
- Power Tool Applications
- High Power Inverter System
- BMS Applications
[TO-263-7Lead]
Datasheet
PGT240N080D7
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