100V 100A 2.9mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT290N100G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 100V at 100Amps @TC = 25℃
- Max RDS(on) = 3.3 mΩ
- Typ RDS(on) = 2.9 mΩ
- Gate Charge(Typ.Qg = 101 nC)
- Surface-mounted package
- Low Thermal Resistance
- Super Trench
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT290N100G
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