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PGT480N120G

120V 120A 4.8mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT480N120G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 120V at 120Amps @TC = 25℃
  • Max RDS(on) = 5.5 mΩ
  • Typ RDS(on) = 4.8 mΩ
  • Gate Charge(Typ.Qg = 71 nC)
  • Low Thermal Resistance
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Motor Drivers
  • DC-DC Converter

[PDFN5060]

Datasheet
PGT480N120G