40V 52A 4.1mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT410N040Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 52Amps @TC = 25℃
- Max RDS(on) = 4.6 mΩ
- Typ RDS(on) = 4.1 mΩ
- Gate Charge(Typ.Qg = 21 nC)
- Surface-mounted package
- Low Thermal Resistance
- Super Trench
Application
- Motor Drives
- DC-DC Converter
[PDFN3333]
Datasheet
PGT410N040Q
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