30V 50A 4.5mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT450N030Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 50Amps @TC = 25℃
- Max RDS(on) = 5.0 mΩ
- Typ RDS(on) = 4.5 mΩ
- Gate Charge(Typ.Qg = 14 nC)
- Surface-mounted package
- Low Thermal Resistance
Application
- Motor Drives
- DC-DC Converter
[PDFN3333]
Datasheet
PGT450N030Q
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