150V 220A 4.5mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT450N150T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 150V at 220Amps @TC = 25℃
- Max RDS(on) = 5.0 mΩ
- Max RDS(on) = 4.5 mΩ
- Gate Charge(Typ.Qg = 158 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Power Tool Applications
- High Power Inverter System
- BMS Applications
[TOLL-8L]
Datasheet
PGT450N150T
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