Skip to main content

PGT500N120T

120V 250A 5.0mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT500N120T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 120V at 250Amps @TC = 25℃
  • Max RDS(on) = 5.5 mΩ
  • Typ RDS(on) = 5.0 mΩ
  • Gate Charge(Typ.Qg = 80 nC)
  • Advanced Trench Cell Design
  • Low Thermal Resistance
  • MSL1
Application
  • Motor Drives
  • DC-DC Converter

[TOLL-8L]

Datasheet
PGT500N120T