30V 50A 5.7mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT570N030Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 30V at 50Amps @TC = 25℃
- Max RDS(on) = 6.5 mΩ
- Typ RDS(on) = 5.7 mΩ
- Gate Charge(Typ.Qg = 22 nC)
- Surface-mounted package
- Advanced Trench Cell Design
Application
- High power inverter system
- Motor Applications
[PDFN3333]
Datasheet
PGT570N030Q
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