-30V -40A 7.8mΩ Si P-Channel Enhancement Mode Split gate MOSFET
Description
PGT780P030Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to -30V at -40Amps @TC = 25℃
- Max RDS(on) = 8.8 mΩ
- Typ RDS(on) = 7.8 mΩ
- Gate Charge(Typ.Qg = 59 nC)
- Advanced Trench Cell Design
- Low Thermal Resistance
Application
- DC-DC Converter
- Motor Drivers
[PDFN3333]
Datasheet
PGT780P030Q
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