60V 110A 7mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM007N060DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si N-CH Enhancement Mode Power MOSFET
- Rated to 60V at 110Amps @TJ = 25℃
- Max RDS(ON) = 7.0 mΩ.
- Typ RDS(ON) = 5.5 mΩ
- Gate Charge(Typ. Qg = 90 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[D2PAK(TO-263)]
Datasheet
PM007N060DG
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