-80V -78A 18mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM018P080GG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si P-CH Enhancement Mode Power MOSFET
- Rated to -80V at -78Amps @TJ = 25℃
- Max RDS(ON) = 18 mΩ.
- Typ RDS(ON) = 14 mΩ
- Gate Charge(Typ. Qg = 62.1 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[DFN5X6-8L]
Datasheet
PM018P080GG
Language