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PM035P100AG

-100V -35A 35mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode

Description

The PM035P100AG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications

Features

Si P-CH Enhancement Mode Power MOSFET

  • Rated to -100V at -35Amps @TJ = 25℃
  • Max RDS(ON) = 35 mΩ.
  • Typ RDS(ON) = 28 mΩ
  • Gate Charge(Typ. Qg = 41 nC)
  • 100% Avalanche Tested
Application
  • Power switch
  • DC/DC converters

[TO-220]

Datasheet
PM035P100AG