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PM080P150DG

-150V -60A 80mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode

Description

The PM080P150DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications

Features

Si P-CH Enhancement Mode Power MOSFET

  • Rated to -150V at -60Amps @TJ = 25℃
  • Max RDS(ON) = 80 mΩ.
  • Typ RDS(ON) = 62 mΩ
  • Gate Charge(Typ. Qg = 27 nC)
  • 100% Avalanche Tested
Application
  • Power switch
  • DC/DC converters

[D2PAK(TO-263)]

Datasheet
PM080P150DG