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PM170N200CR

200V 18A 170mΩ Si Single N-channel Trench MOSFET with Normal Diode

Description

PM170N200CR uses advanced PowerCubeSemi’s MOSFET technology, which provides high performance in on state resistance, fast switching performance and excellent quality. PM170N200CR is suitable device for Synchronous Rectification for Server and general purpose applications.

Features

Si Super junction MOSFET

  • Rated to 200V at 18Amps @TJ = 25℃
  • Max RDS(ON) = 170 mΩ
  • Gate Charge(Typ. Qg = 45 nC)
  • Super low gate charge
  • Green device available
  • Advanced high cell density trench technology
Application
  • Synchronous Rectification
  • Server
  • General purpose applications

[DPAK(TO-252)]

Datasheet
PM170N200CR