650V 80A 27mΩ Si Super junction MOSFET with Fast Recovery Diode
Description
PSF027R065B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy Consequently, the combination of Super Junction MOSFET with FRD is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Features
Si Super junction MOSFET
- Rated to 650V at 80Amps @TJ = 25℃
- Max RDS(on) = 27 mΩ
- Typ RDS(on) = 24 mΩ
- Gate Charge(Typ.Qg = 240 nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
Application
- Solar inverters
- LCD/LED/PDP TV
- Telecom/Server Power supplies
- AC-DC Power Supply
[TO-247 3Lead]
Datasheet
PSF027R065B
Language