650V 10A 350mΩ Si Super junction MOSFET with Zener diode
Description
PSZ10065H is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Features
Si Super junction MOSFET
- Rated to 650V at 10Amps @TJ = 25℃
- Max RDS(on) = 350 mΩ
- Typ RDS(on) = 330 mΩ
- Gate Charge(Typ.Qg = 20 nC)
- Improved dv/dt Capability
- 100% Avalanche Tested’
- Excellent ESD robustness ≥2kV (HBM)
Application
- LCD/LED/PDP TV
- Telecom/Server Power supplies
- AC-DC Power Supply
- LED Lighting
[TO-200F]
Datasheet
PSZ10065H
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