30V 147A 1.27mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT127N030G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 30V at 147Amps @TC = 25℃
- Max RDS(on) = 1.5 mΩ
- Typ RDS(on) = 1.27 mΩ
- Gate Charge(Typ.Qg = 51 nC)
- Low Thermal Resistance
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT127N030G
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