80V 176A 2.0mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT200N080G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 80V at 176Amps @TC = 25℃
- Max RDS(on) = 2.3 mΩ
- Typ RDS(on) = 2.0 mΩ
- Gate Charge(Typ.Qg = 105 nC)
- Surface-mounted package
- Low Thermal Resistance
- Super Trench
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT200N080G
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