85V 220A 2.4mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT240N085D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 85V at 280Amps @TC = 25℃
- Max RDS(on) = 2.8 mΩ
- Typ RDS(on) = 2.4 mΩ
- Gate Charge(Typ.Qg = 124 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- E-Tool Applictions
- High Power Inverter System
- BMS Applications
- Inverter Applications
[TO-263-7Lead]
Datasheet
PGT240N085D7
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